Silicon Carbide (SiC) Nanoelectromechanical Systems and Nanophotonics - Progress, Status, and Perspectives
December 17th, 2018 PHILIP FENG Case Western Reserve University, Cleveland

Silicon carbide (SiC), an advanced polymorphic material of great technological importance, possesses a number of very attractive characteristics including wide bandgap, transparency from visible to near infrared, large refractive index, excellent thermal conductivity, very high elastic modulus and remarkable mechanical hardness and chemical inertness. These attributes make SiC interesting and promising for a number of emerging and critical applications, ranging from high-temperature electronics, sensors and transducers enabled by micro/nanoelectromechanical systems (MEMS/NEMS), to photonics and quantum information processing. In this talk, I will first present a very brief review on some of the key results from a decade of collaborative research efforts on exploring SiC nanostructures for enabling new information processing functions. I will introduce the fundamentals of NEMS enabled by SiC crystals, including nanofabrication and signal transduction in SiC nanodevices.
I will then focus on the development of SiC NEMS and optomechanical devices for sensing, signal processing, and computing, including those in unconventional and harsh environments. These devices and technologies include SiC NEMS resonators, switches and logic gates, SiC nanophotonic and optomechanical resonators, optically transduced SiC micromechanical resonators operating in liquids and biosolutions for sensing and manipulating micro/nanoparticles and cancer cells, etc. Finally, I shall discuss and present today’s open challenges, opportunities, and future perspectives of deepening fundamental and engineering studies of SiC materials and devices for emerging applications.

Seminar, December 17th, 2018, 16:00. Seminar Room

Hosted by Adrian Bachtold